TC5117400BST-60 dram equivalent, dram.
include single power supply of 5V± 10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL.
Features
* 4,194,304 word .
The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both int.
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